| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which buried wiring can be easily formed, and to provide the semiconductor device. <P>SOLUTION: The method of manufacturing the semiconductor device sequentially includes steps of: forming columnar patterns 2, which are arranged in a two-dimensional array, and bridge patterns 3, which connect the columnar patterns 2 in a column direction, on a main surface 1 of a silicon substrate by selective etching; injecting an impurity ion in a surface portion of each of the columnar patterns 2 and bridge patterns 3 and in surface portions of the silicon substrate 1, thereby forming impurity injection layers 4; forming a sidewall 5 on each sidewall of the columnar patterns 2 and bridge patterns 3; removing the impurity injection layer 4 formed on the silicon substrate 1 with the exception of the impurity injection layer 4 covered by the bottom surface of the sidewall 5; removing the sidewall 5 by etch-back; and removing the surface portion of the bridge pattern 3 by the etching after thermally-oxidizing it. Buried wiring 6 extending in the column direction of the columnar patterns 2 is formed within the silicon substrate 1. <P>COPYRIGHT: (C)2009,JPO&INPIT |
