| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material which satisfies both of improvement in resolution and reduction in line edge roughness, in photolithography with high-energy radiation such as ArF excimer laser light as a light source, and a patterning process using the resist material. <P>SOLUTION: The positive resist material comprises a resin component (A) which becomes soluble in an alkaline developer under the action of an acid and a compound (B) which generates an acid in response to an actinic ray or radiation. The resin component (A) is a polymer (1) comprising recurring units of formulae (a), (b) and (c). The compound (B) is a specific sulfonium salt compound. <P>COPYRIGHT: (C)2009,JPO&INPIT |
