| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming mask pattern data for easily and quickly executing mask data processing for flare compensation without losing pattern dimension precision, and to provide a method for manufacturing a semiconductor apparatus. <P>SOLUTION: A pattern to be corrected is a gate pattern including a wiring section and an active gate section formed on a diffusion layer. The method for forming a mask pattern data includes: extracting a diffusion pattern from design mask pattern data; widening the width of the extracted diffusion layer pattern only by predetermined width Δw to generate a second diffusion layer pattern; extracting a gate pattern existing on the second diffusion layer pattern to generate an extended second active gate section; and performing uniform quantity correction to individual second active gate section. <P>COPYRIGHT: (C)2009,JPO&INPIT |
