| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging device capable of attaining high sensitivity and high speed of a shutter. SOLUTION: The imaging device (CMOS image sensor) includes a photodiode portion 4 having a photoelectric conversion function, a floating diffusion region 5 for converting a charge signal into a voltage, an electron multiplying portion 3b for multiplying (increasing) carriers generated by the photodiode portion 4, and a light shield film 26 formed so as to cover a surface of the multiplying portion 3b. COPYRIGHT: (C)2009,JPO&INPIT
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