发明名称 |
SEMI-CONDUCTOR STRUCTURE AND METHOD FOR THE PRODUCTION OF A SEMI-CONDUCTOR STRUCTURE |
摘要 |
The invention relates to a semi-conductor structure, comprising an n metallization and a p metallization (7), and a semi-conductor substrate having an n-doped base region and a p-doped emitter region (2) adjoining the same at least partially for configuring an emitter/base p-n junction, wherein the emitter region (2) extends at least partially approximately parallel to an emitter surface (2b) of the semi-conductor substrate, and the n metallization is connected to the base region, and the p metallization (7) is connected to the emitter region (2) in an electrically conductive manner. It is essential to the invention that the semi-conductor structure further comprises an n-doped passivation region (5), which is disposed at least partially between the emitter surface (2b) and the emitter region 2, wherein the passivation region (5) is neither connected to the n metallization nor to the p metallization (7) in an electrically conductive manner. The invention further relates to a method for the production of such a semi-conductor structure. |
申请公布号 |
WO2009092424(A2) |
申请公布日期 |
2009.07.30 |
申请号 |
WO2008EP10639 |
申请日期 |
2008.12.15 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;ALBERT-LUDWIGS-UNIVERSITAET FREIBURG;SCHULTZ, OLIVER;BENICK, JAN;HERMLE, MARTIN |
发明人 |
SCHULTZ, OLIVER;BENICK, JAN;HERMLE, MARTIN |
分类号 |
H01L31/18;H01L31/0224 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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地址 |
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