| 摘要 |
A method of forming a free-standing (Al, Ga, In)N article (10), by the steps including: providing an epitaxially compatible sacrificial template (12); depositing single crystal (Al, Ga, In)N material (16) on the template (12) to form a composite sacrificial template/(Al, Ga, In)N article (10) including an interface (14) between the sacrificial template (12) and the (Al, Ga, In)N material (16); and interfacially modifying the composite sacrificial template/(Al, Ga, In)N article (10) to part the sacrificial template (12) from the (Al, Ga, In)N material (16) and yield the free-standing (Al, Ga, In)N article (10) produced by such a method is of superior morphological character, and suitable for use as a substrate, e.g., for fabrication of microelectronic and/or optoelectronic devices and device precursor structures.
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