发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a MOSFET capable of significantly reducing an external resistance portion. <P>SOLUTION: The MOSFET 1 is provided with a semiconductor pellet 10, gate and source inner leads 35, 36 that electrically lead out MOSFET elements to the outside, outer leads 37, 38 that are connected to respective inner leads, a header 28 that enhances radiation performance, and a resin sealant 29 that partially seals the semiconductor pellet, an inner lead group, and the header, wherein the inner leads 35, 36 are mechanically and electrically connected to the semiconductor pellet 10 with connection sections 25, 26 formed of bumps, the header 28 exposed from the resin sealant 29 is connected to an opposite side of the semiconductor pellet 10 with a drain connection section 27, and the outer leads 37, 38 are bent in a gull-wing shape. The surface mounting of the outer leads of gull-wing wing shape and the header on the backside of the resin sealant to a mounting substrate reduces the external resistance portion and improve the radiation performance. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009170932(A) 申请公布日期 2009.07.30
申请号 JP20090065951 申请日期 2009.03.18
申请人 RENESAS TECHNOLOGY CORP 发明人 HIRASHIMA TOSHINORI;KISHIMOTO MUNEHISA;HATA TOSHIYUKI;TAKAHASHI YASUSHI
分类号 H01L23/48;H01L21/56;H01L23/29;H01L23/31;H01L23/495 主分类号 H01L23/48
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