| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multi-junction silicon photoelectric conversion device having a high conversion efficiency, which balances the current generated in each silicon thin-film photoelectric conversion unit at a high value by developing a technique for producing a middle layer demonstrating excellent optical properties. <P>SOLUTION: The multi-junction silicon thin film photoelectric conversion device is a thin-film photoelectric conversion device series-connected via the middle layer, wherein the middle layer has a transparent oxide layer/a metal layer/a transparent oxide layer stacked in this order. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
