| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which is constituted by forming lateral type MOS transistors having high breakdown voltages, can form a control circuit portion etc., formed on the same semiconductor substrate, and can be manufactured at low cost, and the semiconductor device manufactured by the same. SOLUTION: In the manufacturing method of the semiconductor device 100, the lateral type MOS transistor is formed in an SOI layer 23 of an SOI substrate 20 having a buried oxide film 22, the lateral type MOS transistor is surrounded with an isolation insulating trench 40 reaching the buried oxide film 22 so that the lateral type MOS transistor is insulated and isolated from a circumference, and a barrier insulating trench 50 the tip of which does not reach the buried oxide film 22 is disposed just below a LOCOS oxide film 30 between a source region 25 and a drain region 27 formed at a surface layer portion of the SOI layer 23. Wherein, the isolation insulating trench 40 and barrier insulating trench 50 is formed in the same insulating trench forming stage. COPYRIGHT: (C)2009,JPO&INPIT
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