| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, capable of reducing on-resistance of a high breakdown strength element while keeping the breakdown strength in the region where a low breakdown strength element is formed at a high value, in the case where the high breakdown strength element and low breakdown strength element (for example, peripheral circuit element) are provided on the same semiconductor substrate. SOLUTION: The semiconductor device comprises a P-type semiconductor substrate 1 which is to be a drain region of a high breakdown strength element 100, a P-type epitaxial layer 2 whose concentration is lower than that of the semiconductor substrate 1 and which is formed on the main surface side of the semiconductor substrate 1, and a drain metal electrode 3 formed on the rear surface side of the semiconductor substrate 1. A film thickness X1 between the bottom surface of the epitaxial layer 2 and the main surface side surface is thinner in a first region 51 with the high breakdown strength element 100 formed than in a second region 52 with a low breakdown strength element 40 formed. COPYRIGHT: (C)2009,JPO&INPIT
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