CRYSTALLINE SEMICONDUCTOR FILM FORMING METHOD, CRYSTALLINE SEMICONDUCTOR FILM FORMING DEVICE AND CRYSTALLINE SEMICONDUCTOR FILM FORMING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To radiate a laser from the back surface of a glass substrate and to facilitate radiation from the back surface when heating and melting an amorphous silicon film formed on the glass substrate by the light of the laser or the like, crystallizing it and obtaining a polycrystalline silicon film. SOLUTION: A crystalline semiconductor film forming device 3 includes a gas floating mechanism 4 for holding the glass substrate 5 in a floated state by jetting a gas. The glass substrate 5 is disposed on the gas floating mechanism 4 turning the amorphous silicon film 51 downwards. The heating laser 2 is radiated from the upper surface side to the glass substrate 5 through an optical device 6 for an object. Also, the heating laser is the green laser of visible light with little absorption on the glass substrate 5 and much absorption on the amorphous silicon film 51. COPYRIGHT: (C)2009,JPO&INPIT