发明名称 ELECTRO-OPTICAL DEVICE AND METHOD FOR DRIVING THE SAME
摘要 A novel structure of an active electro-optical device is disclosed. The device is provided with complementary thin film insulated gate field affect transistors (TFTs) therein which comprise a P-TFT and an N-TFT. P-TFT and N-TFT are connected to a common signal line by the gate electrodes thereof, while the source (or drain) electrodes thereof are connected to a common signal line as well as to one of the picture element electrodes. In case of driving the active electro-optical device, a gradation display can be carried out in a driving method having a display timing determined in relation to a time F for writing one screen and a time (t) for writing in one picture element, by applying a reference signal in a cycle of the time (t), to the signal line used for a certain picture element driving selection, and by applying the select signal to the other signal line at a certain timing within the time (t), and whereby setting the value of the voltage to be applied to a liquid crystal.
申请公布号 US2009190056(A1) 申请公布日期 2009.07.30
申请号 US20090415215 申请日期 2009.03.31
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;MASE AKIRA;HIROKI MASAAKI
分类号 G02F1/136;G02F1/1368;G02F1/13;G02F1/1362;G09G3/20;G09G3/36;H01L21/336;H01L29/786;H04N3/14 主分类号 G02F1/136
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