Memory device employing NVRAM and flash memory cells

摘要

A memory device includes a memory cell array including a NAND flash cell portion including a plurality of first columns of serially-connected flash memory cells and a non-volatile random access memory (NVRAM) cell portion including a plurality of second columns of NVRAM cells. The flash memory cells and the NVRAM cells are arranged such that respective word lines are connected to flash memory cells and NVRAM cells in each of respective rows, which may correspond to page units including flash memory cells and NVRAM cells.