发明名称 |
SEMICONDUCTOR DEVICE WITH TRENCH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME |
摘要 |
The present invention relates to a semiconductor device with a device isolation structure and a method for fabricating the same. The semiconductor device includes: a substrate provided with a trench formed in the substrate; and at least one device isolation structure including an oxide layer formed on the trench, a nitride layer formed on the oxide layer disposed on sidewalls of the trench and a high density plasma oxide layer formed on the nitride layer to fill the trench.
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申请公布号 |
US2009189243(A1) |
申请公布日期 |
2009.07.30 |
申请号 |
US20090419102 |
申请日期 |
2009.04.06 |
申请人 |
LIM JAE-EUN;HWANG SUN-HWAN |
发明人 |
LIM JAE-EUN;HWANG SUN-HWAN |
分类号 |
H01L21/76;H01L29/06;H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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