发明名称 Silicon integrated angular rate sensor
摘要 A motion sensor in the form of an angular rate sensor and a method of making a sensor are provided and includes a support substrate and a silicon sensing ring supported by the substrate and having a flexive resonance. Drive electrodes apply electrostatic force on the ring to cause the ring to resonate. Sensing electrodes sense a change in capacitance indicative of vibration modes of resonance of the ring so as to sense motion. A plurality of silicon support rings connect the substrate to the ring. The support rings are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5 degrees and 67.5 degrees, with respect to the crystalline orientation of the silicon.
申请公布号 US2009188318(A1) 申请公布日期 2009.07.30
申请号 US20080011184 申请日期 2008.01.24
申请人 ZARABADI SEYED R;CHRISTENSON JOHN C;CHILCOTT DAN W;FORESTAL RICHARD G;JOHNSON JACK D 发明人 ZARABADI SEYED R.;CHRISTENSON JOHN C.;CHILCOTT DAN W.;FORESTAL RICHARD G.;JOHNSON JACK D.
分类号 G01P3/44 主分类号 G01P3/44
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