发明名称 |
Silicon integrated angular rate sensor |
摘要 |
A motion sensor in the form of an angular rate sensor and a method of making a sensor are provided and includes a support substrate and a silicon sensing ring supported by the substrate and having a flexive resonance. Drive electrodes apply electrostatic force on the ring to cause the ring to resonate. Sensing electrodes sense a change in capacitance indicative of vibration modes of resonance of the ring so as to sense motion. A plurality of silicon support rings connect the substrate to the ring. The support rings are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5 degrees and 67.5 degrees, with respect to the crystalline orientation of the silicon.
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申请公布号 |
US2009188318(A1) |
申请公布日期 |
2009.07.30 |
申请号 |
US20080011184 |
申请日期 |
2008.01.24 |
申请人 |
ZARABADI SEYED R;CHRISTENSON JOHN C;CHILCOTT DAN W;FORESTAL RICHARD G;JOHNSON JACK D |
发明人 |
ZARABADI SEYED R.;CHRISTENSON JOHN C.;CHILCOTT DAN W.;FORESTAL RICHARD G.;JOHNSON JACK D. |
分类号 |
G01P3/44 |
主分类号 |
G01P3/44 |
代理机构 |
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代理人 |
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地址 |
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