| 摘要 |
A mesa type semiconductor device and its manufacturing method are offered to increase a withstand voltage as well as reducing a leakage current. An N--type semiconductor layer is formed on a surface of a semiconductor substrate, and a P-type semiconductor layer is formed on the N--type semiconductor layer. After that, a mesa groove is formed by etching the P-type semiconductor layer, a PN junction, the N--type semiconductor layer and a partial thickness of the semiconductor substrate so that a width of the mesa groove grows from a surface of the P-type semiconductor layer toward the semiconductor substrate. Subsequent wet etching removes a damaged layer in an inner wall of the mesa groove caused by the preceding etching and transforms the mesa groove in a region close to a surface of the P-type semiconductor layer so that a width of the mesa groove increases toward the surface of the P-type semiconductor layer. After that, the semiconductor substrate and the layers stacked on it are diced.
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