| 摘要 |
Disclosed herein are devices, methods and systems for implementing gettering layers. Devices including gettering layers can be implemented such that a gettering layer doped with carbon, boron, fluorine or any other appropriate impurity is formed on a semiconductor substrate, a device layer is formed on the gettering layer, and a device region is formed in the device layer having a depth that maintains a distance in the device layer between the gettering layer and the device region.
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