发明名称 |
ATOMIC LAYER DEPOSITION APPARATUS |
摘要 |
An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.
|
申请公布号 |
US2009191717(A1) |
申请公布日期 |
2009.07.30 |
申请号 |
US20090356999 |
申请日期 |
2009.01.21 |
申请人 |
KIM KI-HYUN;IM KI-VIN;CHOI HOON-SANG;HAN MOON-HYEONG |
发明人 |
KIM KI-HYUN;IM KI-VIN;CHOI HOON-SANG;HAN MOON-HYEONG |
分类号 |
H01L21/30;C23C16/30;C23C16/44;C23C16/455;C23C16/458 |
主分类号 |
H01L21/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|