摘要 |
<p>A method of forming an electronic device (70) on a metal substrate (10) deposits a first seed layer (40) of a first metal on at least one master surface (30) with a roughness less than 400 nm. A supporting metal layer (60) is bonded to the first seed layer (40) to form the metal substrate (10). The metal substrate (10) is removed from the master surface (30), and at least one electronic device (70) is formed on the seed layer (40) of the metal substrate (10).</p> |