<p>A crystalline material structure is provided. The crystalline material structure includes a semiconductor structure being annealed at temperatures above the brittle- to-ductile transition temperature of the semiconductor structure, and cooled in an approximately linear time-temperature profile down to approximately its respective transition temperature To.</p>
申请公布号
WO2009094526(A1)
申请公布日期
2009.07.30
申请号
WO2009US31817
申请日期
2009.01.23
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;HARTMAN, KATHERINE;SERDY, JAMES;BUONASSISI, TONIO