发明名称 DATA GENERATING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRON-BEAM EXPOSURE SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To suppress an increase in load of exposure data generation and to generate exposure data for an electron beam such that a shape by electron-beam exposure approximates a shape processed by light exposure. <P>SOLUTION: A data generating method includes: generating the electron-beam exposure data to be used for electron-beam exposure from design data of a semiconductor device; extracting difference information showing a different part between the shape of an electron-beam exposure pattern formed on a substrate by electron-beam exposure on the basis of the electron-beam exposure data and the shape of a light exposure pattern formed on the substrate by light exposure on the basis of the design data of the semiconductor device; determining whether the size of the different part between the shape of the electron-beam exposure pattern and the shape of the light exposure pattern is within a prescribed reference value; acquiring shape change exposure data by changing the shape of the pattern of the electron-beam exposure data on the basis of the difference information and an update step of updating the electron-beam exposure data; and repeating the difference extraction, determination, and update when the size of the different part is not within the prescribed reference value. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009170743(A) 申请公布日期 2009.07.30
申请号 JP20080008709 申请日期 2008.01.18
申请人 FUJITSU MICROELECTRONICS LTD 发明人 OGINO KOZO;HOSHINO HIROMI
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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