发明名称 |
DATA GENERATING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRON-BEAM EXPOSURE SYSTEM |
摘要 |
<P>PROBLEM TO BE SOLVED: To suppress an increase in load of exposure data generation and to generate exposure data for an electron beam such that a shape by electron-beam exposure approximates a shape processed by light exposure. <P>SOLUTION: A data generating method includes: generating the electron-beam exposure data to be used for electron-beam exposure from design data of a semiconductor device; extracting difference information showing a different part between the shape of an electron-beam exposure pattern formed on a substrate by electron-beam exposure on the basis of the electron-beam exposure data and the shape of a light exposure pattern formed on the substrate by light exposure on the basis of the design data of the semiconductor device; determining whether the size of the different part between the shape of the electron-beam exposure pattern and the shape of the light exposure pattern is within a prescribed reference value; acquiring shape change exposure data by changing the shape of the pattern of the electron-beam exposure data on the basis of the difference information and an update step of updating the electron-beam exposure data; and repeating the difference extraction, determination, and update when the size of the different part is not within the prescribed reference value. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009170743(A) |
申请公布日期 |
2009.07.30 |
申请号 |
JP20080008709 |
申请日期 |
2008.01.18 |
申请人 |
FUJITSU MICROELECTRONICS LTD |
发明人 |
OGINO KOZO;HOSHINO HIROMI |
分类号 |
H01L21/027;G03F7/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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