发明名称 CIRCUITS AND DESIGN STRUCTURES FOR MONITORING NBTI (NEGATIVE BIAS TEMPERATURE INSTABILITY) EFFECT AND/OR PBTI (POSITIVE BIAS TEMPERATURE INSTABILITY) EFFECT
摘要 A ring oscillator has an odd number of NOR-gates greater than or equal to three, each with first and second input terminals, a voltage supply terminal, and an output terminal. The first input terminals of all the NOR-gates are interconnected, and each of the NOR-gates has its output terminal connected to the second input terminal of an immediately adjacent one of the NOR-gates. During a stress mode, a voltage supply and control block applies a stress enable signal to the interconnected first input terminals, and an increased supply voltage to the voltage supply terminals. During a measurement mode, this block grounds the interconnected first input terminals, and applies a normal supply voltage to the voltage supply terminals. Also included are an analogous NAND-gate based circuit, a circuit combining the NAND- and NOR-aspects, a circuit with a ring oscillator where the inverters may be coupled directly or through inverting paths, and circuits for measuring the bias temperature instability effect in pass gates.
申请公布号 US2009189703(A1) 申请公布日期 2009.07.30
申请号 US20080021459 申请日期 2008.01.29
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHUANG CHING-TE K.;KIM JAE-JOON;KIM TAE-HYOUNG;LU PONG-FEI;MUKHOPADHYAY SAIBAL;RAO RAHUL M.;WANG SHAO-YI
分类号 H03K3/03 主分类号 H03K3/03
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