PHASE CHANGE MEMORY DEVICE

摘要

A phase change memory device is provided to prevent an excessive leakage current due to a dummy cell array in a pre-charge mode by activating the dummy cell array in an active mode. A phase change memory device includes a cell array(CA) and a column switching part(CSW). The cell array includes a unit cell(C) and a dummy cell(DC). The unit cell is arranged in an intersection region of a word line and a bit line. A discharge path of the dummy cell is blocked by responding to a first bit line discharge signal(BLDIS-n) in a pre-charge mode. The dummy cell discharges the bit line in response to the first bit line discharge signal in an active mode. The dummy cell has the same structure as the unit cell. The column switching part selectively controls connection between the bit line and a global bit line(GBL) according to column selection signals(LY1-n~LY4-n).