发明名称 Free-standing electrostatically-doped carbon nanotube device and method for making same
摘要 <p>A method and associated structure for forming a free-standing electrostatically-doped carbon nanotube device is described. The method includes providing a carbon nanotube on a substrate in such a way as to have a free-standing portion. One way of forming a free-standing portion of the carbon nanotube is to remove a portion of the substrate. Another described way of forming a free-standing portion of the carbon nanotube is to dispose a pair of metal electrodes on a first substrate portion, removing portions of the first substrate portion adjacent to the metal electrodes, and conformally disposing a second substrate portion on the first substrate portion to form a trench.</p>
申请公布号 EP1696480(A3) 申请公布日期 2009.07.29
申请号 EP20060250821 申请日期 2006.02.16
申请人 GENERAL ELECTRIC COMPANY 发明人 LEE, JI UNG
分类号 H01L21/768;B82B3/00;H01L21/00;H01L29/06;H01L29/12;H01L29/26;H01L33/18;H01L33/24;H01L33/34;H01L51/00;H01L51/30;H01L51/40;H01L51/52 主分类号 H01L21/768
代理机构 代理人
主权项
地址