| 摘要 |
<p>A solid imaging apparatus and a manufacturing method thereof for realizing the reduction of the light concentration distance are provided to realize new metal layer and realize the thinning of the wiring layer with the state maintaining the high shading performance. A solid imaging apparatus(1) comprises a light-receiving pixel unit(12), a black level standard pixel unit(13), and a multilayer wiring unit(14). The light-receiving pixel unit is formed in the semiconductor substrate. The black level standard pixel part is formed in the semiconductor board. The multilayer wiring unit is installed at the light-receiving pixel part and the above semiconductor top of the substrate including the black level standard pixel unit. The multilayer wiring unit is made of insulating layer, and metal wiring layer. The insulating layer is formed in the above semiconductor top of the substrate. The metal wiring layer is formed with a plurality of layers among the insulating layer.</p> |
