PHASE CHANGE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

A phase change memory device and a method for forming the same are provided to improve heat efficiency by reducing the loss of the heat in a contact surface with a phase change film pattern by reducing an area of an upper surface of the bottom electrode contact in contact with the phase change film pattern. A phase change memory device includes a constructive pattern(25), a bottom electrode contact(35), a phase change film pattern(50), a top electrode(60). The conductive pattern is positioned on a substrate(10). The bottom electrode contact is positioned on the conductive pattern. The phase change pattern is positioned on the bottom electrode contact. The top electrode is positioned on the phase change film pattern. The area of the upper surface of the bottom electrode contact is smaller than the area of the lower surface.