EQUIPMENT FOR DEPOSITING ATOMIC LAYER

摘要

A device and a method for depositing an atomic layer are provided to perform the deposition on a plurality of semiconductor substrates at the same time, thereby improving throughput. A device for depositing an atomic layer comprises a reaction chamber(10), a heater(20) and a plurality of injectors(30a, 30b). The reaction chamber has an independent space. The heater supports a plurality of constant-distance semiconductor substrates(12) within the reaction chamber. The heater heats the semiconductor substrates. The injectors are individually switched according to the semiconductor substrates supported by the heater. The injectors spray a reaction gas on the semiconductor substrates.