| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of providing optical output larger than 100 mW without executing temperature control even when the environment is set at a high temperature around 85°C; and an optical fiber amplifier using it. SOLUTION: This semiconductor light emitting element is provided with a semiconductor substrate 11 formed of InP, an active layer 14 formed on the semiconductor substrate 11, having well layers 14a and barrier layers 14b alternately stacked, and formed of InGaAsP, and a front end surface 22a and a rear end surface 22b being end parts of the active layer 14, and formed by cleaving the semiconductor substrate 11. The barrier layer 14b has tensile strain not larger than 0.5%, and the number of layers of the well layer 14a is not larger than 5. COPYRIGHT: (C)2009,JPO&INPIT
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