| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing degradation of bonding strength even when a second substrate and a first substrate formed by sintering are subjected to surface activated bonding; and a semiconductor device. SOLUTION: In this manufacturing method of a semiconductor device, a semiconductor device having a chip substrate 160 mounted with an infrared sensor 1620, and a sealing substrate 10 sealing the infrared sensor 1620 by being bonded to the chip substrate 160 is manufactured. The sealing substrate 10 is provided with a sintered body 111 formed by sintering, and a film 132 having less crystalline grains compared to the sintered body 111 and having an aligned plane orientation. The manufacturing method includes processes of: forming a film 130 (132) on a sintered body 110 (111); and bringing the chip substrate 160 into surface activated bonding with the film 132 at room temperature. COPYRIGHT: (C)2009,JPO&INPIT
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