Silicon integrated angular rate sensor

摘要

A motion sensor in the form of an angular rate sensor (10) and a method of making a sensor are provided and includes a support substrate (12) and a silicon sensing ring (14) supported by the substrate and having a flexural resonance.
Drive electrodes (20A) apply electrostatic force on the ring (14) to cause the ring to resonate. Sensing electrodes (20B) sense a change in capacitance indicative of vibration modes of resonance of the ring (14) so as to sense motion. A plurality of silicon support rings (16) connect the substrate (12) to the ring (14). The support springs (16) have portions (B1 and B2) are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5° and 67.5°, with respect to the crystalline orientation of the silicon. Also disclosed is a method of making a silicon integrated sensor.