发明名称 |
CORRELATED ELECTRON MEMORY |
摘要 |
<p>A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.</p> |
申请公布号 |
EP2082426(A2) |
申请公布日期 |
2009.07.29 |
申请号 |
EP20070864165 |
申请日期 |
2007.11.08 |
申请人 |
SYMETRIX CORPORATION |
发明人 |
PAZ DE ARAUJO, CARLOS A.;BRUBAKER, MATTHEW D.;CELINSKA, JOLANTA |
分类号 |
G11C13/00;H01L27/10 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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