发明名称 FORMATION OF THROUGH-WAFER ELECTRICAL INTERCONNECTIONS USING AN ETCH STOP LAYER
摘要 <p>Providing through-wafer interconnections in a semiconductor wafer includes forming a sacrificial membrane in a pre-existing semiconductor wafer, depositing metallization over one side of the wafer so as to cover exposed portions of the sacrificial membrane facing the one side of the wafer, removing exposed portions of the sacrificial membrane facing the other side of the wafer, and depositing metallization over the other side of the wafer so as to contact the previously deposited metallization. Techniques also are disclosed for providing capacitive and other structures using thin metal membranes.</p>
申请公布号 EP2082422(A2) 申请公布日期 2009.07.29
申请号 EP20070849037 申请日期 2007.09.25
申请人 HYMITE A/S 发明人 SHIV, LIOR
分类号 H01L21/768;H01L21/48;H01L23/04;H01L23/10;H01L23/48;H01L23/498 主分类号 H01L21/768
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