<p>An image sensor is provided to reduce cross talk and increase the sensitivity of the image sensor by reducing the amount of light flow out from the photoelectric conversion element. An image sensor comprises a substrate(100), a reflector(102a), a photoelectric conversion element, and a hole basin(104a). The reflector is located on a surface of the substrate. The photoelectric conversion element is located on a surface of the reflector. The hole basin is positioned in the lower region of the photoelectric conversion element. The hole basin is positioned around the reflector. The hole basin is the area in which the high density P type impurity ion is injected.</p>
申请公布号
KR20090081939(A)
申请公布日期
2009.07.29
申请号
KR20080008125
申请日期
2008.01.25
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
MOON, KYOUNG SIK;AHN, JUNG CHAK;LIM, MOO SUP;CHOI, SUNG HO;LEE, KANG SUN