发明名称 Method of manufacturing a semi conductor device
摘要 A method of manufacturing a semiconductor device comprising a power semiconductor, a drive circuit, and a protection circuit that are integrated into the same package, is characterized in that: the method includes the step of setting the resistance value of a shunt resistor provided in series with output lines from said power semiconductor to detect an output current, at a predetermined value by selecting from various possible configurations the bonding positions on conductive bonding regions of the shunt resistor, of wires connecting said output lines and said shunt resistor together.
申请公布号 EP2012357(A3) 申请公布日期 2009.07.29
申请号 EP20080167294 申请日期 1999.11.24
申请人 FUJI ELECTRIC COMPANY LIMITED 发明人 WATANABE, MANABU;ODA, YOSHINORI
分类号 H01L25/07;H01L23/64;H01L25/16;H01L25/18 主分类号 H01L25/07
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