FABRICATION METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

A method for manufacturing a nitride semiconductor substrate is provided to obtain the nitride semiconductor substrate with a large diameter with a low cost. A hexagonal buffer layer(20) is formed on a surface(100) of a Si substrate(10). An epitaxial growth of a nitride semiconductor layer(30) is performed on the buffer layer. The buffer layer includes at least one of AlN, TiN, HfN, GaN, InN or ZrN. The formation step of the buffer layer includes a crystallization step by a thermal process of an amorphous layer formation step.