ETCHANT COMPOSITION FOR AN INDIUM BASED OXIDE LAYER AND METHOD FOR FABRICATING METAL PATTERN USING THE SAME

摘要

An etchant composition for an indium-based oxide film, and a method for forming a metal pattern using the composition are provided to improve chemical resistance and environmental friendliness. An etchant composition for an indium-based oxide film comprises 1 ~ 15 weight% of H2SO4; 0.01 ~ 2 weight% of HF; 0.01 ~ 5 weight% of at least one kind of salt compound selected from an ammonium salt, a potassium salt and a phosphate; and 78 ~ 98.98 weight% of water. Preferably the etchant composition comprises further at least one additive selected from an etching control agent, a surfactant, a metal ion scavenger, an anticorrosive and a pH adjusting agent.