| 发明名称 |
Early contact, high cell density process |
| 摘要 |
A method of fabricating a power semiconductor device in which contact trenches are formed prior to forming the gate trenches.
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| 申请公布号 |
US7566622(B2) |
申请公布日期 |
2009.07.28 |
| 申请号 |
US20060446877 |
申请日期 |
2006.06.05 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
AMALI ADAM I |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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