METHOD FOR FABRICATING METAL LINE IN SEMICONDUCTOR DEVICE

摘要

A metal wiring forming method of a semiconductor device for improving the reliability of the device and securing the sensing margin of the semiconductor device is provided to improve a process margin by using the surface of the hard mask film which is uneven. A method for forming bit line of a semiconductor device is as follows. The barrier metal film, the bonding layer and a bit line metal layer(220) are formed on the semiconductor substrate. It is formed owing to the grain size of the material comprising the bit line metal layer. A hard mask film(225) is formed on above surface of the bit line metal layer. According to the step height of the non-uniform surface on the hard mask film, the sputtering rate forms the other plasma. The hard mask film in which the surface is uniform is patterned and the hard mask film pattern forms a shape. The bit line stack is formed into the etching process of having the hard mask film pattern to mask.