Multi-level dynamic memory device having open bit line structure and method of driving the same

摘要

A multi-level dynamic memory device having an open bit line structure is disclosed. The multi-level dynamic memory device includes a plurality of word lines; a plurality of bit lines provided in an open bit line structure; a plurality of memory cells each of which is connected to each of the word lines and each of the bit lines and stores at least two bits of data; and a plurality of sense amplifiers, each of which amplifies a voltage difference between the bit lines, the bit lines being located at opposite sides of each of the plurality of sense amplifiers.