| 摘要 |
In a method of measuring a channel boosting voltage, a threshold voltage of a pass disturbance is measured in accordance with change of a pass voltage applied to a selected cell under the condition that the pass voltage having a certain level is provided to a cell not selected of erased cells. Subsequently, a threshold voltage of a program disturbance is measured in accordance with change of the pass voltage applied to the cell not selected under the condition that a program voltage having a certain level is provided to a cell selected of the erased cells. Then, the channel boosting voltage is measured by using a pass bias voltage applied when the threshold voltage of the pass disturbance is identical to that of the program disturbance. As a result, the channel boosting voltage is accurately monitored when a program operation is performed. Accordingly, a program disturbance characteristic may be easily detected, and also yield and fail may be easily analyzed.
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