| 摘要 |
<p>A semiconductor device capable of preventing the generation of the snapback phenomenon at the low temperature is provided to increase the repeated improvement of the destruction resistance amount. A semiconductor device comprises a semiconductor device region, a collector layer(4) of a second conductive type and buffer layer(5) in a first conductivity type. The semiconductor device region is installed at the front surface side of the semiconductor substrate of the first conductivity type. The collector layer comprises the surface of the backside of the semiconductor board, depth, and the second conductive impurity region. The maximum value of the impurity concentration is about 2 by 1016/cm^3. The maximum value of the impurity concentration is about 3 by 1015/cm^3.</p> |
