| 摘要 |
A method for manufacturing a semiconductor device having a metal silicide layer comprises forming a structure including a plurality of gate stacks formed on a semiconductor substrate, forming a gate spacer layer formed on an upper surface of the semiconductor substrate and around a sidewall of each gate stack, and forming an insulation layer between the gate stacks. The method further comprises forming a metal silicide layer on an exposed surface of the semiconductor substrate between the gate stacks. |
