FERRO ELECTRIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME

摘要

A ferroelectric random access memory and a manufacturing method thereof for improving the adhesion of ferroelectric and upper electrode are provided to prevent the defect of the interfacial property. A ferroelectric random access memory comprises a first interlayer insulating film(128), a contact(132) for a bottom electrode, a ferroelectric pattern(134), a second inter metal dielectric(138), and a first reaction-preventing film pattern. The first interlayer insulating film is equipped on the substrate. The contact for the bottom electrode is equipped within the first interlayer insulating film. The ferroelectric pattern contacts the contact for the bottom electrode. The second inter metal dielectric comprises the contact hole exposing one part of the ferroelectric pattern. The first reaction-preventing film pattern is equipped in the upper side of the second inter metal dielectric. The second reaction-preventing film pattern is equipped in the side wall of the contact hole.