发明名称 High speed fanned out system architecture and input/output circuits for non-volatile memory
摘要 In various embodiments, a plurality of non-volatile memory devices, such as NAND flash memory device, may be connected to a host controller device in a fanned out configuration that allows each of the plurality of memory devices to perform read and/or write operations simultaneously. Each non-volatile memory device may include high speed input circuitry and high speed output circuitry so that transfers to and from memory are not limited by the speed of the flash memory read/write interface.
申请公布号 US7567471(B2) 申请公布日期 2009.07.28
申请号 US20060645043 申请日期 2006.12.21
申请人 INTEL CORPORATION 发明人 EILERT SEAN S.;ROZMAN RODNEY R.;QAWAMI SHEKOUFEH;HINTON GLENN
分类号 G11C7/00 主分类号 G11C7/00
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