发明名称 Method of preventing dielectric breakdown of semiconductor device and semiconductor device preventing dielectric breakdown
摘要 A semiconductor device that prevents a build-up of electrostatic charge in a dummy pad is provided. The semiconductor device may contain an internal circuit formed on a semiconductor substrate and the dummy pad which is not electrically connected to the internal circuit. The semiconductor device may further include a seal ring that surrounds the internal circuit and the dummy pad, where the seal ring is electrically connected to the semiconductor substrate and includes a pattern in a first metal layer, a contact between the pattern in the first metal layer and the semiconductor substrate, patterns in upper metal layers stacked above the pattern in the first metal layer, and multiple electrical contacts between the patterns in the first metal layer and the upper metal layers, in which the dummy pad is electrically connected to the seal ring.
申请公布号 US7567484(B2) 申请公布日期 2009.07.28
申请号 US20070790035 申请日期 2007.04.23
申请人 KAWASAKI MICROELECTRONICS, INC. 发明人 OCHI TSUNEO
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
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