发明名称 METHOD OF MANUFACTURING ARRAY SUBSTRATE AND ARRAY SUBSTRATE
摘要 <p>A manufacturing method of an array substrate is provided to minimize damage to a fine pattern. A gate line(122) and a gate electrode(124) are formed on a base substrate(110). A source metal layer(150) is formed on the base substrate on which the gate line and the gate electrode are formed. A data line(155), a source electrode(157), and a drain electrode(158) are formed by etching the source metal layer. The data line intersects with the gate line. The source electrode is connected to the data line. The drain electrode is isolated from the source electrode. An additive gas is provided on the base substrate on which the drain electrode is formed. An etching component of an etching gas reacts to the source metal layer. A by-product formed on each side wall of the data line, the source electrode, and the drain electrode is removed. A pixel electrode is contacted with the drain electrode.</p>
申请公布号 KR20090080786(A) 申请公布日期 2009.07.27
申请号 KR20080006751 申请日期 2008.01.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SANG GAB;OH, MIN SEOK;JEONG, YU GWANG;PARK, HONG SICK;KIM, SHI YUL;KIM, JANG SOO;CHOI, SHIN IL
分类号 H01L29/786 主分类号 H01L29/786
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