RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A resistive memory device is provided to prevent thermal degradation of a diode and a resistance change layer by including a protecting layer. A resistive memory device includes a storage node, a switching device, and a protecting layer(140). The storage node includes a resistance change layer(110). The switching device is connected to the storage node. The protecting layer covers a part exposed of the resistance change layer, is made of material which does not a silicide reaction with the resistance change layer, is a material layer which prevents hydrogen permeation, and includes at least one among aluminum oxide and titanium oxide. The resistance change layer is a metal oxide layer.