| 摘要 |
A memory module and a manufacturing method thereof are provided to prevent a thermal attack of a memory module due to a plurality of reflow processes by attaching a semiconductor package after performing a process for forming a contact terminal and a filling film on a module substrate. A memory module includes a semiconductor package(122) and a module substrate(110). The semiconductor package includes a substrate(126) and a semiconductor chip(124). A ball land(130) is included on a bottom surface of the substrate. The semiconductor chip is attached on the substrate. The semiconductor chip is electrically connected to the substrate. A contact pad(114) including a contact terminal(120) is included on a top surface of the module substrate. The module substrate includes a filling film(118) which surrounds the contact pad. The semiconductor package is attached on the module substrate in order to connect the ball land to the contact terminal of the module substrate.
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