发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH DUMMY CELLS AND METHOD FOR ADJUSTING THRESHOLD VOLTAGE OF DUMMY CELLS |
摘要 |
A nonvolatile semiconductor memory device and a method for controlling a threshold voltage of dummy cells are provided to minimize a read error due to read disturbance by programming the dummy cells quickly. A memory cell array(1) has dummy cells inside a cell string. The dummy cells have different threshold voltage. A sense amplifier and latch(2) senses and stores the input output data of the memory cell transistors inside the memory cell array. A column decoder(3) selects the bit lines. A low decoder(5) selects the word lines. A high voltage generating circuit(8) generates the voltage higher than the operation power voltage. A control circuit(7) controls the operation of the nonvolatile semiconductor memory device. A dummy cell controller(101) is connected to the control circuit. The dummy cell controller controls the threshold voltage of the dummy cells inside the memory cell array. |
申请公布号 |
KR20090080588(A) |
申请公布日期 |
2009.07.27 |
申请号 |
KR20080006431 |
申请日期 |
2008.01.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, KI TAE |
分类号 |
G11C16/34 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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