| 摘要 |
A manufacturing method of a semiconductor device is provided to prevent a change of a threshold voltage of a transistor according to a position of an active region by removing ions from a surface of the active region above a well and forming the active region again. A trench for isolation is formed by etching selectively a semiconductor substrate(100). An insulating layer is formed on an upper surface of the semiconductor substrate including the trench for isolation. The semiconductor substrate of an NMOS region is exposed by etching the insulating layer. A first well(110) is formed in the exposed semiconductor substrate. The semiconductor substrate of a PMOS region is exposed by etching the insulating layer. A second well(114) is formed in the exposed semiconductor substrate. The semiconductor substrate is etched back to remove the ions from the surface of the exposed semiconductor substrate. A silicon layer(116) is formed on the semiconductor substrate. An isolation layer(120) is formed by planarizing the silicon layer and the insulating layer.
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